Materials | Free Full-Text | The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes
Advantages of the 1200 V SiC Schottky Diodes with MPS Design | Mouser
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes
Basic unit cell of a MPS diode | Download Scientific Diagram
A New 1200V SiC MPS Diode with Improved Performance and Ruggedness | Scientific.Net
Design and Optimization of Silicon Carbide Schottky Diode - Technical Articles
Why all SiC Schottky diodes are not made equal | Efficiency Wins
Figure 2 from Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation | Semantic Scholar
Reverse Characteristic Model of SiC MPS Diode | SpringerLink
Junction barrier Schottky diode (JBS) and merged PiN Schottky diode... | Download Scientific Diagram
1200V CoolSiC™ Schottky Diode Generation 5
Silicon Carbide (SiC) Schottky Diodes - Wolfspeed | Mouser
Ruggedness of 1200 V SiC MPS diodes - ScienceDirect
Improved JBS structure to reduce the leakage current and increase the surge current capability | 臺灣東芝電子零組件股份有限公司 | 台灣
Photoresponse characteristics of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode | SpringerLink
Cut a) and top view b) of the structure of an MPS-Diode. In b) Black:... | Download Scientific Diagram
1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability
4.4.3.2 MPS Diode Simulation
GE06MPS06A - Genesic Semiconductor - Silicon Carbide Schottky Diode, MPS Gen V, Single
Design and Optimization of Silicon Carbide Schottky Diodes - Power Electronics News
Advantages of the 1200 V SiC Schottky Diode with MPS Design - Technical Articles
1.2-kV 4H-SiC Merged PiN Schottky Diode With Improved Surge Current Capability
The Wolfspeed MPS Diode Advantage - YouTube
Improved JBS structure to reduce the leakage current and increase the surge current capability | 臺灣東芝電子零組件股份有限公司 | 台灣
Why all SiC Schottky diodes are not made equal | Efficiency Wins
